Publications

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Journal Papers

  1. W. Burrows, S. A. Hatfield, F. Bastiman and G. R. Bell, Interaction of Mn with GaAs and InSb: incorporation, surface reconstruction and nano-cluster formation, J. Phys.: Condens. Matter 26 (2014) 395006 (Link)
  2. T. Walther, R. D. Richards, F. Bastiman, Scanning transmission electron microscopy measurement of bismuth segregation in thin Ga(As,Bi) layers grown by molecular beam epitaxy, Crystal Research and Technology 07/2014 (Link)
  3. A. R. Mohmad, F. Bastiman, C.J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David, B. Y. Majlis, Localization effects and band gap of GaAsBi alloys, physica status solidi (b) 251(6) (2014) 1276-1281 (Link)
  4. D. F. Reyes, F. Bastiman, C. J. Hunter, D. L. Sales, A. M. Sanchez, J. P. R. David, D. González, Bismuth incorporation and the role of ordering in GaAsBi/GaAs structure, Nanoscale Research Letters 9(1) (2014) 23 (Link)
  5. R. D. Richards, F. Bastiman, C. J. Hunter, D. F. Mendes, A. R. Mohmad, J. S. Roberts, J. P. R. David, Molecular beam epitaxy growth of GaAsBi using As2 and As4, J. Cryst. Grow. 390 (2014) 120–124 (Link)
  6. I. C. SandallF. Bastiman, B. White, R. D. Richards, D. F. Mendes, J. P. D. David and C. H. Tan, Demonstration of InAsBi photoresponse beyond 3.5 μm, Appp. Phys. Lett. 104 (2014) 171109 (Link)
  7. D. F Reyes, F. Bastiman, C. J. Hunter, D. L. Sales, A. M. Sanchez, J. P. R. David and D. González, Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures, Nanoscale Research Letters 9(1) (2014)23  (Link)
  8. L. DominguezD. F. Reyes, F. Bastiman, D. L. Sales, R. D. Richards, D. F. Mendes, J. P. R. David, and D. Gonzalez, Formation of Tetragonal InBi Clusters in InAsBi/InAs(100) Heterostructures Grown by Molecular Beam Epitaxy, Appl. Phys. Express 6 (2013) 112601 (Link)
  9. D. F. Reyes, D. Gonza´ lez, F. Bastiman, L. Dominguez, C. J. Hunter, E. Guerrero, M. A. Roldan, A. Mayoral, J. P. R. David, and D. L. Sales, Photoluminescence Enhancement of InAs(Bi) Quantum Dots by Bi Clustering, Appl. Phys. Express 6: 042103 (2013) (Link)
  10. C. J. Hunter, F. Bastiman, A. R. Mohmad, R. Richards, J. S. Ng, S. J. Sweeney and J. P. R. David, Absorption Characteristics of GaAs1‑xBix/GaAs Diodes in the Near-infrared, Photonics Technology Letters 24(23): 2191-2194 (2012) (Link)
  11. A. R. Mohmad, F. Bastiman, C.J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, and J. P. R. David, Effects of rapid thermal annealing on GaAs1-xBixalloys, Appl. Phys. Lett. 101(1): 012106 (2012) (Link)
  12. F. Bastiman, A. G Cullis, J. P. R. David, S. J. Sweeney, Bi incorporation in GaAs(100)-2×1 and 4×3 reconstructions investigated by RHEED andSTM. J. Cryst. Growth 341: 19-23 (2012) (Link)
  13. F. Bastiman, A. R.. Mohmad, J. S. Ng, S. J. Sweeney, and J. P. R. David, Non-stoichiometricmolecular beam epitaxy growth conditions for GaAsBi/GaAs(100). J. Cryst. Growth 338: 57 (2012) (Link)
  14. A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney, and J. P. R. David, The effect of Bi composition to the optical quality of GaAs1-xBix. Appl. Phys. Lett., 99(4): 042107 (2011) (Link)
  15. A. R. Mohmad, F. Bastiman, J. S. Ng, S. J. Sweeney, and J .P. R. David, Photoluminescence investigation of high quality GaAs1 – xBixon GaAs. Appl. Phys. Lett. 98(12): 122107 (2011) (Link)
  16. F. Bastiman, J. C. Lin, A. G. Cullis, R. Hogg, and M. Skolnick, Ga assisted oxide desorption on GaAs(0 0 1) studied by scanning tunnelling microscopy, J. Cryst. Growth 312(10): 1687 (2010) (Link)
  17. F. Bastiman, A. G. Cullis, M. Hopkinson, and K. J. Briston, Two step optimized process for scanning tunnelling microscopy tip fabrication. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 28(2): 371-375 (2010) (Link)
  18. F. Bastiman and A. G. Cullis, GaAs(0 0 1) planarization after conventional oxide removal utilising self-governed InAs QD site selection. Applied Surface Science 256(13): 4269 (2010) (Link)
  19. F. Bastiman, A. G. Cullis, and M. Hopkinson, InAs/GaAs(001) wetting layer formation observed in situ by concurrent MBE and STM.Surface Science 603(24): p. 3439-3444 (2009) (Link)
  20. F. Bastiman, A. G. Cullis, and M. Hopkinson, As-rich reconstruction stability observed by high temperature scanning tunnelling microscopy, J. Cryst. Growth 311(20): 4478-4482 (2009) (Link)
  21. F. Bastiman, A. G. Cullis, and M. Hopkinson, GaAs(001) (2 x 4) to c(4 x 4) transformation observed in situ by STM during As flux irradiation,Surface Science 603(16): 2398-2402 (2009) (Link)

 

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