Conferences and Talks

Invited talks:

  1. Developments in molecular beam epitaxy growth of GaAsBi/GaAs(100)
    F. Bastiman, J.P.R David
    The 2nd International Workshop on Bismuth-Containing Semiconductors
    University of Surrey, Guildford, UK, 18-20/07/2011

  2. Characterisation of GaAsBi diodes
    J. P. R. David, R. D. Richards, C. J. Hunter, F. Bastiman
    The 5th International Workshop on Bismuth-Containing Semiconductors
    Cork, Ireland, 21-23/7/2014

International conferences:

  1. Demonstration of an InAsBi photodiode operating in the MWIR
    I.C. Sandall, F. Bastiman, B. White, R. D. Richards, C. H. Tan, J. P. R. David
    SPIE Security and Defence
    Amsterdam, Holland, 22-25/9/2014.

  2. MBE grown GaAsBi/GaAs MQW structures: structural and optical characterization
    R. D. Richards, F. Bastiman, J. S. Roberts, R. Beanland, D. Walker, J. P. R. David
    18th International Conference on Molecular Beam Epitaxy
    Flagstaff, Arizona, USA, 7-12/9/2014.

  3. Strain and relaxation in GaAsBi/GaAs multiple quantum well structures
    R. D. Richards, F. Bastiman, D. Walker, R. Beanland, J. P. R. David
    The 5th International Workshop on Bismuth-Containing Semiconductors
    Cork, Ireland, 21-23/7/2014.

  4. Characterisation of GaAsBi diodes
    J. P. R. David, R. D. Richards, C. J. Hunter, F. Bastiman
    The 5th International Workshop on Bismuth-Containing Semiconductors
    Cork, Ireland, 21-23/7/2014.

  5. The opto-electronic characteristics of GaAs/GaAsBi/GaAs p-i-n diodes.
    Z. Zhou, D. F. Mendes, R. D. Richards, F. Bastiman, J. P. R. David
    The 5th International Workshop on Bismuth-Containing Semiconductors
    Cork, Ireland, 21-23/7/2014.

  6. Characterisation of bulk GaAsBi p-i-n diodes
    R. D. Richards, Z. Zhou, D. F. Mendes, F. Bastiman, J. P. R. David
    UK Semiconductors
    Sheffield, England, 9-10/7/2014.>/p>

  7. InAsBi photodiode with a cut of wavelength of 3.95 µm
    I. C. Sandall, F. Bastiman, B. White, R. D. Richards, J. P. R. David, C. H. Tan.
    UK Semiconductors
    Sheffield, England, 9-10/7/2014.

  8. Growth and characterisation of GaAsBi/GaAs multiple quantum well structures
    R. D. Richards, F. Bastiman, C. Hunter, A. R. Mohmad, J. S. Roberts, J. P. R. David.
    Compound Semiconductor Week
    Montpellier, France, 11-15/5/2014.

  9. The role of nucleation energy in Ga-assisted GaAs nanowire growth on Si(111)
    F. Bastiman, C. Somaschini, H. Küpers, L. Geelhaar
    Nanowires 2013
    Rehovot, Israel 12-14/11/2013.

  10. Growth and characterization of p-i-n diodes containing multiple quantum well GaAsBi layers
    C. J. Hunter, R. D. Richards, F. Bastiman, A. R. Mohmad, J. P. R. David
    4th International Workshop on Bismuth-Containing Semiconductors
    Fayetteville, USA, 14-17/7/2013.

  11. TEM characterisation of bulk GaAsBi layers. UK Semiconductors
    C. J. Hunter, F. Bastiman, A. R. Mohmad, R. D. Richards, R. Beanland, J. P. R.David
    UK Semiconductors Conference
    Sheffield, England, 3-4/7/2013.

  12. GaAsBi MQWs for multi-junction photovoltaics
    R. D. Richards, F. Bastiman, C. J. Hunter, A. R. Mohmad, J. P. R. David
    Photovoltaics Specialists Conference
    Tampa, Florida, USA, 16-21/6/2013.

  13. Reconstruction orientated Bi incorporation mechanisms in GaAsBi/GaAs(100)
    F. Bastiman, A.R. Mohmad, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David
    EURO MBE 2013
    Levi, Finland 10-13/3/2013.

  14. GaAsBi for photovoltaic applications
    R. D. Richards, F. Bastiman, C. J. Hunter, A. R. Mohmad, J. P. R. David, N. J. Ekins-Daukes.
    Semiconductor and Integrated OptoElectronics Conference
    Cardiff, Wales, 29/4-1/5/2013.

  15. The effect of growth parameters on the optical and structural quality of GaAs1-xBix alloys
    A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David
    The 17thInternational Conference on Molecular Beam Epitaxy
    University of Nara, Japan, 15-18/09/2012.

  16. Evaluating Bi distribution within GaAsBi epilayers by transmission electron microscopy
    D. F. Reyes, F. Bastiman, A. M. Sanchez, R. Beanland, L. D. Blanco, D. L. Sales, D. González
    15th European microscopy conference (EMC 2012)
    Manchester Central, UK 16-21/09/2012.

  17. The optical and electrical properties of GaAs1-xBix/GaAs diodes
    C. J. Hunter, F. Bastiman, A. R. Mohmad, R. D. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David
    The 3rd International Workshop on Bismuth-Containing Semiconductors
    University of Victoria, Victoria, B.C., Canada 15-18/07/2012.

  18. Effect of As species on growth of GaAs1-xBix
    R. D. Richards, F. Bastiman, A. R. Mohmad, C.J. Hunter, J. S. Ng, S. J. Sweeney, J. P. R. David
    The 3rd International Workshop on Bismuth-Containing Semiconductors
    University of Victoria, Victoria, B.C., Canada 15-18/07/2012.

  19. The effect of growth parameters on the optical and structural quality of GaAs1-xBixalloys
    Bastiman, A. R. Mohmad, C.J. Hunter, R. D. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David
    The 3rd International Workshop on Bismuth-Containing Semiconductors
    University of Victoria, Victoria, B.C., Canada 15-18/07/2012.

  20. Effect of As species on growth of GaAs1-xBix
    R. D. Richards, F. Bastiman, A. R. Mohmad, C.J. Hunter, J. S. Ng, S. J. Sweeney, J. P. R. David
    UK Semiconductors 2013
    University of Sheffield, Sheffield, UK 4-5/07/2012.

  21. Growth and characterisation of GaAs1-xBixp-i-n diodes
    Bastiman, C. J. Hunter, A. R. Mohmad, R. D. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David
    European Materials Research Society (eMRS)
    Conference Centre, Strasbourg, France 14-16/05/2012.

  22. Absorption characteristics of GaAs1-xBix/GaAs diodes in the near-infra red
    C. J. Hunter, F. Bastiman, A. R. Mohmad, R. D. Richards, J. S. Ng, S. J. Sweeney, J. P. R. David
    Semiconductor and integrated optoelectronics (SIOE)
    The University of Cardiff, UK 2-4/04/2012.

  23. Developments in molecular beam epitaxy growth of GaAsBi/GaAs(100)
    Bastiman, J.P.R David
    The 2nd International Workshop on Bismuth-Containing Semiconductors
    University of Surrey, Guildford, UK, 18-20/07/2011.

  24. Effects of rapid thermal annealing on GaAsBi alloys
    A. R. Mohmad, F. Bastiman, C. J. Hunter, R. D. Richards, S. J. Sweeney, J. S. Ng, J. P. R. David
    Semiconductor and integrated optoelectronics (SIOE)
    The University of Cardiff, UK 2-4/04/2012.

  25. The effect of Bi incorporation on the optical quality of GaAs1-xBix
    A. R. Mohmad, F. Bastiman, C. J. Hunter, J. S. Ng, S. J. Sweeney and J. P. R. David
    The 2nd International Workshop on Bismuth-Containing Semiconductors
    University of Surrey, Guildford, UK 18-20/07/2011

  26. Room temperature photoluminescence intensity enhancement in GaAs1-xBixalloys
    A. R. Mohmad, F. Bastiman, J.S. Ng, S.J. Sweeney, and J.P.R. David
    38th International Symposium on Compound Semiconductors (ISCS 2011)
    Maritim proArte Hotel, Berlin, Germany 22-26/05/2011 (Link)

  27. Growth and characterisation of GaAs1-xBix for opto-electronic applications
    F. Bastiman, A.R. Mohmad, J. S. Ng, S. Sweeney and J. P. R. David
    Semiconductor and integrated optoelectronics (SIOE 2011)
    The University of Cardiff, UK 18-20/04/2011

  28. GaAsBi atomic surface order and interfacial roughness observed by STM and TEM
    F. Bastiman, Y. Qiu, and T. Walther
    Microscopy of Semiconductor Materials XVII (MSM XVII)
    The University of Cambridge, Cambridge, UK, 4-7/04/2011 (link)

  29. Photoluminescence Investigation of bulk GaAsBi on GaAs
    A. R. Mohmad, F. Bastiman, J. S. Ng, S. Jin, S. J. Sweeney and J. P. R. David
    The 1st International Workshop on Bismuth-Containing Semiconductors
    University of Ann Arbour, Michigan, USA 14-16/07/2010

  30. Morphological Growth Instabilities on GaAsBi/GaAs(001)
    F. Bastiman, A. R. Mohmad, J. S. Ng, S. Jin, S. J. Sweeney and J. P. R. David
    The 1st International Workshop on Bismuth-Containing Semiconductors
    University of Ann Arbour, Michigan, USA 14-16/07/2010

  31. The Art of InAs/GaAs(001) MBE without buffer layer growth observed by STM
    F. Bastiman, R. Hogg, M. Skolnick, A.G. Cullis, and M. Hopkinson
    SemiconNano2009
    University of Anan, Japan 10-14/08/2009

  32. Temperature dependence of Ga-assisted oxide desorption on GaAs(001)
    F. Bastiman, R. Hogg, M. Skolnick, A.G. Cullis, and M. Hopkinson
    Microscopy of Semiconductor Materials XVI (MSM XVI)
    The University of Oxford, Oxford, UK 17-20/03/2009 (link)

  33. InAs/GaAs(001) molecular beam epitaxial growth in a scanning tunnelling microscope
    F. Bastiman, A.G. Cullis, and M. Hopkinson
    Microscopy of Semiconductor Materials XVI (MSM XVI)
    The University of Oxford, Oxford UK 17-20/03/2009 (link)

  34. Growth and in vivo STM of III-V Compound Semiconductors
    F. Bastiman, A.G. Cullis, M. Hopkinson, and M. Green
    Microscopy of Semiconductor Materials XV (MSM XV)
    The University of Cambridge, Cambridge, UK 2-5/04/2007 (pdf)