I was recently reading a nanowire publication and I was reminded of another means of calibrating the group V flux that I used in my III-Sb days. This is the preferred method for III-Sb epitaxy, however it is also applicable to general III-V growth. In the following I will use GaAs as an example.
The first step is to establish your Ga growth rate using the method in my RHEED oscillations (1) post. Then convert this into atoms/nm2/s using the method in my flux and growth rate post. Finally, you can then calculate the atomic flux of the Ga cell versus temperature using the method in my Arrhenius plot post.
Then set the As cracker to a value that you wish to determine in atomic flux, for example set it to 25 % open. Set the Ga cell temperature to give you a flux of 0.069 atoms/nm2/s [i.e. 0.1 ML/s growth rate on GaAs(100)]. Open the Ga shutter and record the RHEED oscillations in the usual manner. As long as the As flux is larger than the Ga flux you should obtain a growth rate of 0.1 ML/s ± an error of up to 5% depending on how well the RHEED intensity oscillated. Note the error gets larger the fewer oscillations you obtain. Hopefully you can get at least 10 oscillations.
Next double the Ga cell’s flux to obtain a growth rate to 0.2 ML/s and (importantly) leave the As flux set to the original value. You will need to leave the Ga cell to settle for 10 minutes after changing its temperature. As long as the As flux is larger than the Ga flux you should be able to obtain a growth rate of 0.2 ML/s ± 5%. The magnitude of the As flux compared to the Ga flux is key to this method. Keep increasing your Ga flux until (eventually) the RHEED oscillations no longer yield the growth rate determined by the Ga cell. When this happens the growth rate is no longer dictated by the Ga flux, it is dictated by the As flux. You can check this by increasing the As flux and repeating the measurement that gave the lower than expected growth rate.
If you plot out all your data points you should obtain a graph like the one shown in Figure 1. You can see that starting at small Ga flux, the growth rate initially increases linearly until eventually it becomes As poor (Ga rich) and the growth rate is limited by the As flux. The growth rate you obtain under these As poor (Ga rich) conditions indicates the As growth rate in ML/s. 0.5 ML/s in this example. You can then convert the As growth rate into an As flux using my flux and growth rate post once more.